Electron beam lithography of HSQ/PMMA bilayer resists for negative tone lift-off process
نویسندگان
چکیده
A HSQ/PMMA bilayer resist system, in which HSQ as negative tone electron beam resist top layer and PMMA as bottom layer, has been investigated for negative tone lift-off process. Patterns are first defined on the HSQ resist using electron beam lithography, and then transferred into the bottom PMMA layer using oxygen reactive ion etching. Electron beam exposure of HSQ on top of PMMA layer has been characterised, showing the PMMA underlayer has no effect on the exposure of HSQ. Optimum conditions for reactive ion etching of PMMA underlayer have been established. The undercut length in the PMMA layer is found near linearly dependence on etching time. Well defined undercut profile has been achieved in the HSQ/PMMA bilayer resist system, and good negative tone metal lift-off structures have been successfully produced. 2008 Elsevier B.V. All rights reserved.
منابع مشابه
Sub-10-nm half-pitch electron-beam lithography by using poly(methyl methacrylate) as a negative resist
Developing high-resolution resists and processes for electron-beam lithography is of great importance for high-density magnetic storage, integrated circuits, and nanoelectronic and nanophotonic devices. Until now, hydrogen silsesquioxane HSQ and calixarene were the only two reported negative resists that could approach sub-10-nm half-pitch resolution for electron-beam lithography. Here, the aut...
متن کاملSub-10 nm electron beam lithography using cold development of poly„methylmethacrylate..
We investigate poly~methylmethacrylate! ~PMMA! development processing with cold developers ~4–10 °C! for its effect on resolution, resist residue, and pattern quality of sub-10 nm electron beam lithography ~EBL!. We find that low-temperature development results in higher EBL resolution and improved feature quality. PMMA trenches of 4–8 nm are obtained reproducibly at 30 kV using cold developmen...
متن کاملResists for sub-20-nm electron beam lithography with a focus on HSQ: state of the art.
In the past decade, the feature size in ultra large-scale integration (ULSI) has been continuously decreasing, leading to nanostructure fabrication. Nowadays, various lithographic techniques ranging from conventional methods (e.g. photolithography, x-rays) to unconventional ones (e.g. nanoimprint lithography, self-assembled monolayers) are used to create small features. Among all these, resist-...
متن کاملElectron beam lithography patterning of sub-10 nm line using hydrogen silsesquioxane for nanoscale device applications
We investigated novel patterning techniques to produce ultrafine patterns for nanoscale devices. Hydrogen silsesquioxane HSQ was employed as a high-resolution negative tone inorganic electron beam resist. The nanoscale patterns with sub-10 nm linewidth were successfully formed. A trimming process of HSQ by the reactive ion etcher RIE played an important role for the formation of 5 nm nanowire p...
متن کاملPolystyrene negative resist for high-resolution electron beam lithography
We studied the exposure behavior of low molecular weight polystyrene as a negative tone electron beam lithography (EBL) resist, with the goal of finding the ultimate achievable resolution. It demonstrated fairly well-defined patterning of a 20-nm period line array and a 15-nm period dot array, which are the densest patterns ever achieved using organic EBL resists. Such dense patterns can be ach...
متن کامل